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Updated: Jul 24, 2025

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印度兴奋剂辅助单层Ga2O3脱皮用于性能增强的MOSFET

Penghui Li1, Linpeng Dong1,2, Chong Li3

  • 1Shaanxi Province Key Laboratory of Thin Films Technology and Optical Test, Xi'an Technological University, Xi'an, 710032, China. lpdong@xatu.edu.cn.

Nanoscale
|July 10, 2023
PubMed
概括

兴奋剂显著降低了单层氧化物 (ML Ga2O3) 的脱皮能量,使其更容易生产. 这种兴奋剂还提高了纳米设备的稳定性和性能,显示了未来应用的巨大潜力.

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