使a-HfSiOxmemristor仿:

Muhammad Ismail1, Maria Rasheed1, Chandreswar Mahata1

  • 1Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, Republic of Korea.

Nano convergence
|July 10, 2023
PubMed
概括

哈夫尼氧化记忆器在人工智能应用中表现出卓越的多层切换和突触功能. 这些设备具有很高的耐力和保留能力,证明了先进的神经形态计算系统的潜力.

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