在14 nm技术节点上设计的SOI FinFET铁电间隔器的单一事件响应
1Aviation Maintenance NCO Academy, Air Force Engineering University, Xinyang, 464000, Henan, China.
Scientific reports
|July 10, 2023
概括
这项研究表明,间隔器在SOI FinFET中增强了单事件瞬态 (SET). 特定的铁电间隔器配置可以减轻SET效应,提高设备的可靠性.
科学领域:
- 半导体设备物理学 半导体设备物理
- 电子产品中的辐射效应.
- 通过先进的晶体管技术,实现了先进的晶体管技术.
背景情况:
- 在绝缘体 (SOI) 上的FinFET对于现代电子产品至关重要.
- 了解单事件瞬态 (SET) 对辐射硬化应用至关重要.
- 间隔器材料显著影响设备的性能和可靠性.
研究的目的:
- 研究间隔材料对14nm SOI FinFETs单事件响应的影响.
- 评估不同间隔器配置的有效性,包括铁电材料,以减轻SET.
- 分析线性能量转移和SET特征之间的关系.
主要方法:
- 使用了设备技术计算机辅助设计 (TCAD) 建模.
- 用实验数据精心校准模型.
- 在不同的条件下,模拟分析了SET电流峰值,收集电荷和双极放大系数.
主要成果:
- 与没有间隔器的配置相比,间隔器通常会增强SET.
- 二氧化 (HfO2) 单间隔器显示了最小的SET增强 (2.21%当前峰值,0.97%的电荷).
- 双铁电间距配置 (S侧铁电,D侧HfO2) 实际上使SET减弱了6.93% (电流峰值) 和1.86% (电荷).
- 增加线性能量传输导致了更高的SET电流和电荷,但降低了双极放大系数.
结论:
- 间隔器存在影响SOI FinFET中的SET特征.
- 铁电间隔器的战略放置为SET缓解提供了一个有前途的方法.
- 采用特定间隔材料的设备设计可以提高辐射耐受性.
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