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作为温度传感器的双耗尽PIN光电极的建模和设计
Ricardo A Marques Lameirinhas1,2, João Paulo N Torres2,3, Catarina P Correia V Bernardo1,2
1Department of Electrical and Computer Engineering, Instituto Superior Técnico, 1049-001 Lisbon, Portugal.
Sensors (Basel, Switzerland)
|July 11, 2023
概括
研究人员开发了一种数值模型来分析酸-酸 (InP-InGaAs) 光二极管的频率反应. 该模型表明,这些光二极管可以通过检测带宽变化与温度变化而作为温度传感器发挥作用.
科学领域:
- 光电和通信领域的光电子和通信领域.
- 半导体设备物理 半导体设备物理
背景情况:
- 光学系统对于现代通信至关重要,双耗尽PIN光二极管在各种光学频段运行.
- 半导体特性对环境条件敏感,使光学设备能够作为传感器起作用.
- 化-化 (InP-InGaAs) 光二极管是1300nm (O波段) 周围光电转换的标准.
研究的目的:
- 以数值分析InP-InGaAs光二极管的频率响应,考虑到传输时间和电容效应.
- 通过监测带宽变化与温度的变化来研究InP-InGaAs光二极管作为温度传感器的潜力.
- 优化设备尺寸,以提高温度传感能力.
主要方法:
- 在不均的照明下实施数值模型来计算光二极管的频率响应.
- 在高达100 GHz的输入频率范围内分析频率响应.
- 在三个不同的温度下对设备性能进行模拟:275 K,300 K和325 K.
主要成果:
- 数值模型准确计算了频率响应,考虑了传输时间和电容效应.
- 与室温相比的25K温度变化导致带宽转移8.374GHz (增加) 或3.620GHz (减少).
- 优化设备尺寸 (总长2.536微米,吸收区域为53.95%) 确定用于6V应用电压和500微米2的活性面积.
结论:
- InP-InGaAs光二极管可以通过将带宽变化与温度波动相关联,有效地作为温度传感器发挥作用.
- 优化的光二极管设计提供了一种新的温度传感解决方案,用于集成到酸 (InP) 光子集成电路中.
- 这项研究有助于开发用于电信和传感应用的多功能光电子元件.
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