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在205K处的LWIR侧向效应位置敏感的HgCdTe光探测器

Jarosław Pawluczyk^1,2, Mateusz Żbik^2,3, Józef Piotrowski²

¹Institute of Applied Physics, Military University of Technology, 00-908 Warsaw, Poland.

Sensors (Basel, Switzerland)

|July 11, 2023

概括

这项研究详细介绍了一种用于长波红外 (LWIR) 成像的新型佩尔蒂埃冷却,四侧位置敏感探测器 (PSD). 该设备在205K时实现了出色的0.3-0.6μm位置分辨率.

科学领域:

光电学是指光电子产品.
红外探测器技术红外探测器技术
半导体物理半导体物理

背景情况:

位置敏感探测器 (PSD) 对于精确的空间测量至关重要.
长波红外线 (LWIR) 检测需要专门的光二极管材料和冷却.
侧向效果PSD为位置传感提供了一种独特的方法.

研究的目的:

介绍一个新的佩尔蒂埃冷却LWIR PSD的详细构造和特征.
为了证明基于修改的HgCdTe光二极管的四边PSD的性能能力.
在LWIR光谱范围内建立一个新的位置分辨率基准.

主要方法:

使用修改的PIN HgCdTe光二极管制造一个四边PSD.
实施佩尔蒂埃冷却,以达到205K的工作温度.
使用10.5μm辐射,聚焦点大小和特定的整合/采样技术进行表征.

主要成果:

该设备在3-11μm光谱范围内工作,光敏面积为1×1mm2.
在特定的辐射和测量条件下,达到0.3-0.6μm的位置分辨率.
通过聚焦的2.6mW,10.5μm辐射点 (240μm直径) 证明了有效的操作.

结论:

开发的Peltier冷却LWIRPSD代表了红外位置传感的重大进步.
四边HgCdTe光二极管设计使LWIR频谱中的高分辨率空间检测成为可能.
这项技术对于需要精确的红外目标定位的应用具有前景.

关键词:

在 HgCdTe 的基础上.卢维尔 (LWIR) 是一个非常有价值的人.一个PIN光电二极管.这是一个PSD,PSD是PSD.皮尔蒂埃冷却的冷却方式侧面效应是侧面的影响.摄影探测器的光检测器位置感应探测器检测器一个四边形的四边形.

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