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Updated: Aug 9, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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MoSe2的光学特性 植入了超低能CrIons的单层

Minh N Bui1,2, Stefan Rost2,3, Manuel Auge4

  • 1Peter Grünberg Institute 9 (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany.

ACS applied materials & interfaces
|July 11, 2023
PubMed
概括

这项研究表明,低能离子植入可以将二化物 (MoSe2) 与 (Cr) 混合,以创建新的光学特性. 这些与Cr相关的缺陷可以为先进的二维 (2D) 材料提供量身定制的兴奋剂.

关键词:
这就是MoSe2Se.密度函数理论密度函数理论分子动力学分子动力学摄影光的发光效应过渡金属二甲基化物单层.超低能离子植入装置 超低能离子植入装置范德瓦尔斯异构结构的异构结构

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Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...