强大的负纵向磁阻和旋转轨道扭矩在喷射Pt3Sn和Pt3SnxFe1-x的拓半金属中
Delin Zhang1, Wei Jiang2, Hwanhui Yun3
1Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA. dlzhang@umn.edu.
Nature communications
|July 12, 2023
概括
拓半金属表现出奇拉异常,导致负磁阻. 研究人员制造了Pt3Sn和Pt3SnFe薄膜,观察了强大的负纵向电磁阻,表明了旋转器件的潜力.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 量子材料是一种量子材料.
背景情况:
- 拓半金属具有奇拉异常,与拓绝缘体不同,使负磁阻成为可能.
- 这些材料承载有导体散体和拓表面状态,这对旋转电子学至关重要.
- Pt3Sn是已知的II型迪拉克半金属,而兴奋剂则提供可调节的相.
研究的目的:
- 为了研究Pt3Sn和Pt3SnxFe1-x薄膜的磁阻性能.
- 探索这些材料在自旋电子应用中的潜力,特别是自旋轨道扭矩装置.
- 了解合异常和拓相过渡在它们的传输特性中的作用.
主要方法:
- 使用喷雾技术制造高排序的金属Pt3Sn和Pt3SnxFe1-x薄膜.
- 磁阻的系统角度依赖性研究 (在平面内和平面外).
- 第一个原则计算来确认理论模型和相位过渡.
主要成果:
- 在Pt3Sn.中观察到强大的正方形负纵向磁电阻.
- 在Pt3SnxFe1-x.中观察到强大的线性负纵向磁电阻.
- 将观察到的现象归因于II型迪拉克和可调节的韦尔半金属相.
结论:
- 由于拓性质,Pt3Sn和Pt3SnxFe1-x薄膜表现出显著的负纵向磁电阻.
- 这些材料显示了先进的旋转轨道扭矩装置的潜力.
- 这些发现有助于我们更好地理解拓性半金属中的奇拉异常及其对自旋电子的应用.
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