InZnTiON通道层用于高度稳定的薄膜晶体管和发光晶体管
Ju-Hyeon Lee1, Jung-Min Park1, Yu Jung Park2
1School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea.
ACS applied materials & interfaces
|July 13, 2023
概括
化 (TiN) 注稳定了薄膜晶体管 (TFT) 和发光晶体管 (LET) 的无形氧化 (InZnO) 通道,通过减少氧气空缺和载体度.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 设备工程 设备工程
背景情况:
- 无形氧化物 (InZnO) 是薄膜晶体管 (TFT) 和发光晶体管 (LET) 的有前途的通道材料.
- 在InZnO中空缺的氧气会导致电荷载体的陷状态,从而导致不稳定性和性能恶化.
- 控制载体度和最小化缺陷对于提高设备稳定性和性能至关重要.
研究的目的:
- 研究化 (TiN) 兴奋剂对无形InZnO通道特性的影响.
- 通过使用TiN作为载体抑制剂来提高TFT和LET的稳定性和性能.
- 探索TiN合的InZnO作为LET中有机半导体的替代品的潜力.
主要方法:
- 将TiN入无形的InZnO通道.
- 添加的InZnO薄膜的结构和电气性能的表征.
- 使用修改后的InZnO通道制造和测试TFT和LET.
- 在门偏差应力下对设备性能进行分析,并评估发光特性.
主要成果:
- TiN 兴奋剂有效地降低了InZnO通道中的氧气空缺和载体度,作为载体抑制剂.
- 被TiN兴奋的InZnO通道表现出一种无形结构,没有特征的表面形态.
- 使用InZnTiON通道的TFT显示出更好的下值摆动和增强的稳定性,并且显著减少了值电压变化.
- 使用InZnTiON通道的LET显示,由于防止激发灭,光发射强度提高.
结论:
- TiN 兴奋剂是一种有效的策略,可以为电子和光电子设备创建稳定的无形 InZnO 通道.
- 氧气空缺和载体度的减少导致设备的稳定性和性能优越.
- 用TiN添加剂的InZnO为高性能LET提供了有机半导体的有希望的替代品.
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