相关实验视频

Updated: Jul 23, 2025

Developing High Performance GaP/Si Heterojunction Solar Cells

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

无兴奋剂的高性能光伏效应在WSe₂侧面p-n同位结形成的接触工程

Hai Yen Le Thi¹, Tien Dat Ngo¹, Nhat Anh Nguyen Phan²

¹Sungkyunkwan Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea.

ACS applied materials & interfaces

|July 13, 2023

概括

研究人员开发了一种无兴奋剂的方法,使用二化来创建横向的p-n同连接光伏. 这种接触工程方法显著提高了下一代光电子设备的性能.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
固态物理固态物理

背景情况:

二维过渡金属二甲基化物 (TMDs) 为半导体设备提供了独特的特性,如灵活性和透明度.
基于TMD的p-n二极管对光电子有希望,但在商业用途中面临性能限制.

研究的目的:

提出一种简单的,无兴奋剂的方法,用于制造使用少数层二化的横向p-n同接点光伏.
通过接触工程来提高基于TMD的光伏设备的性能.

主要方法:

使用几层二化制造一个侧面的p-n同接光伏.
使用表面和边缘接触的组合来构建设备.
采用无兴奋剂接触工程策略.

主要成果:

实现了光伏效应,其高填充系数约为0.64.
演示了高达大约4.5%的功率转换效率.
获得了大约67.6%的高外部量子效率和283mA/W的光响应性.

结论:

开发的无兴奋剂接触工程技术有效地创造了高性能横向p-n同连接光伏.
这种方法显示了为推进下一代光电子设备的重大潜力.
该研究强调了TMDs对于高效的光伏应用的可行性.

关键词:

这就是WSe2Se2.在WSe2二极管.在WSe2光电二极管.边缘接触接触边缘接触侧面的p-n同质结合点太阳能光伏的使用

更多相关视频

Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices

Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices

Published on: July 8, 2016

Harvesting Solar Energy by Means of Charge-Separating Nanocrystals and Their Solids

Harvesting Solar Energy by Means of Charge-Separating Nanocrystals and Their Solids

Published on: August 23, 2012

相关概念视频

P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...