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使用变能电子辐射在Ba_0.2K_0.8Fe₂超导体中研究的离子选择性散射

Kyuil Cho^1,2, Marcin Kończykowski³, Makariy A Tanatar^1,4

¹Ames National Laboratory, Ames, IA 50011, USA.

Materials (Basel, Switzerland)

|July 14, 2023

概括

对Ba1-xKxFe2As2超导体的电子辐射显示,缺陷主要在铁子网格中形成. 这种障碍抑制了超导性,证实了铁子网格.

科学领域:

凝聚物质物理学凝聚物质物理学
材料科学材料科学材料科学
超导电性超导电性超导电性

背景情况:

基于铁的超导体具有复杂的电子特性.
了解缺陷行为对于优化超导性能至关重要.
铁基超导体中特定子网的作用仍然是一个活跃的研究领域.

研究的目的:

为了研究非磁性障碍对Ba1-xKxFe2As2.2.的超导特性的影响.
为了确定在电子辐射下产生缺陷的主要子网格.
实验验证铁基超导体中铁子网的假设主导作用.

主要方法:

一个单晶Ba1-xKxFe2As2 (x = 0.80) 的低温可变能量电子辐射.
在辐射过程中在22K的样本电阻的现场测量.
在辐射运行之间单独测量超导过渡温度 (Tc).
实验结果与缺陷创建模拟和计算的部分截面进行比较.

主要成果:

电阻与所有测试能量 (1.02.5 MeV) 的辐射流动性线性增加,表明稀释点状障碍.
电阻增加的速度在电子能量低于1.5 MeV时达到顶峰.
超导Tc被单调地抑制,随着辐射流量的增加.
分析表明,铁子网中存在主要的缺陷,特别是在较低的能量下.

结论:

电子辐射诱导在Ba1-xKxFe2As2.2中产生无关联的稀释点缺陷.
在这个系统中,铁子网格是电子辐射下缺陷形成的主要地点.
这一发现实验证实了铁子网在铁基材料的超导性中的关键作用.

关键词:

缺陷的缺陷缺陷的缺陷这是一种混乱的混乱,一种混乱的混乱.基于铁的超导体.辐射辐射辐射的辐射.散射散射是一种散射.超导性是一种超导性.

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