Zn1-xRexCr2Se4单晶体的合成,结构和物理化学特征
Izabela Jendrzejewska1, Tadeusz Groń2, Joachim Kusz2
1Institute of Chemistry, University of Silesia in Katowice, 40-007 Katowice, Poland.
Materials (Basel, Switzerland)
|July 14, 2023
概括
合成和特征化了添加的ZnCr2Se4单晶. 这些p型半导体具有抗铁磁性和热稳定性,其中替代影响关键电子参数.
科学领域:
- 固态物理 固态物理
- 材料科学 材料科学 材料科学
- 无机化学 无机化学
背景情况:
- 化 (ZnCr2Se4) 是一个著名的磁性半导体.
- 了解兴奋剂对其特性的影响对于潜在的应用至关重要.
研究的目的:
- 为了合成和研究 (Re) 化ZnCr2Se4单晶.
- 确定Re替代对ZnCr2Se4.4的物理化学性质的影响.
主要方法:
- 单晶是使用化学蒸汽运输来生长的.
- 描述涉及X射线衍射,热,磁,电和特定热量测量.
主要成果:
- 立方体 (Fd3 ̄m) 结构确认用于重新剂的ZnCr2Se4.4.
- 该材料是一种p型半导体,其反铁磁顺序低于尼尔温度 (TN = 21.7 K).
- 反兴奋剂增加了激活能量,费米能量和费米温度;增强了高达1100°C的热稳定性.
结论:
- 替代改变了ZnCr2Se4.4的电子和磁性特性.
- 合成的单晶显示出由于其可调节特性而具有先进材料应用的潜力.
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