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Updated: Jul 23, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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使用直接MoO2前体的MoS2的CVD合成:研究生长温度对前体扩散和形态演变的影响

Ratchanok Somphonsane1,2, Tinna Chiawchan1, Waraporn Bootsa-Ard1

  • 1Department of Physics, School of Science, King Mongkut's Institute of Technology Ladkrabang, Bangkok 10520, Thailand.

Materials (Basel, Switzerland)
|July 14, 2023
PubMed
概括

增长温度极大地影响了二硫化 (MoS) 合成. 温度在760°C左右的最佳条件产生连续膜,而较高的温度导致因前体扩散而导致中间状态.

关键词:
这种MoO2前体是MoO2的前体.拉曼·拉曼,拉曼·拉曼,拉曼·拉曼.这就是S:Mo比率.化学蒸气沉积 化学蒸气沉积扩散扩散是一种扩散.一个单层的MoS2两个维的 (2D) 材料.

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