PVD

Marcin Lebioda1, Ewa Korzeniewska1

  • 1Institute of Electrical Engineering Systems, Lodz University of Technology, Stefanowskiego 18, 90-537 Lodz, Poland.

PubMed
概括

织复合材料中的聚氨缓冲层在加热时显著改变表面电阻,影响可穿戴电子产品. 这种在自热和外部加热模式中观察到的效应,需要对稳定的导电结构进行仔细的材料选择.

相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Boundary Layer Characteristics01:18

Boundary Layer Characteristics

When a fluid encounters a solid surface, a boundary layer forms due to the interaction between the fluid's motion and the stationary surface. This phenomenon is characterized by a thin region adjacent to the surface where viscous forces dominate, influencing the fluid's velocity profile. The development of the boundary layer begins at the leading edge of the surface and evolves as the fluid moves downstream.As the fluid flows over the surface, friction between the fluid and the wall slows down...
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P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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