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Updated: Jul 23, 2025

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

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在半极112 ̄2 InGaN/GaN多量子中表面波动和发光特征之间的相关性

Mi-Hyang Sheen1, Yong-Hee Lee1, Jongjin Jang2

  • 1Research Institute of Advanced Materials, Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.

Nanomaterials (Basel, Switzerland)
|July 14, 2023
PubMed
概括

在蓝宝石基板上种植化/化 (InGaN/GaN) 多量子井导致表面波动. 面表现出不同的合物,其中一个面表现出大约4%的含量比另一个高.

关键词:
在TEM-cathodoluminescence中产生光.印度的度是印度的度.半极的 GaN 半极的 GaN表面的波动是表面的波动.

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