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Updated: Jul 30, 2026

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM
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基于InGaN/GaN的微型发光二极管 (LED) 在高空间分辨率的功率依赖光学表征

Haifeng Yang1,2, Yufeng Li1,2, Jiawei Wang1,2

  • 1Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi'an Jiaotong University, Xi'an 710049, China.

Nanomaterials (Basel, Switzerland)
|July 14, 2023
PubMed
概括

微型LED的效率因激发功率而在空间上有所不同. 侧墙性能从中心更低到中心更高,影响设备均性,突出显示离子残留效应.

关键词:
微型LED是什么意思侧墙损伤 侧墙损伤具有空间分辨率的光发光.

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Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...