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热像素对像素性能的影响背面照明互补金属氧化物半导体 (CMOS) 图像传感器

Bingkai Liu^1,2, Yudong Li^1,2, Lin Wen^1,2

¹Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China.

Sensors (Basel, Switzerland)

|July 14, 2023

概括

辐射诱导的热像素在黑暗条件下显著降低CMOS图像传感器的性能. 这些由集群缺陷引起的缺陷会影响暗信号不均性和随机电报信号.

科学领域:

固态物理固态物理
半导体设备半导体设备
辐射的影响辐射影响

背景情况:

在成像应用中,CMOS图像传感器至关重要.
质子辐射可以诱导半导体设备的缺陷.
热像素是一个已知的影响图像传感器性能的问题.

研究的目的:

为了研究辐射诱导的热像素对固定光二极管CMOS图像传感器的影响.
分析热像素在明亮和黑暗环境中的影响.
为了确定导致热像素的缺陷的性质.

主要方法:

调查的固定光二极管0.18微米背面照明的CMOS图像传感器.
将传感器暴露在10 MeV的质子辐射中.
在光明和黑暗条件下分析了热和正常像素的性能参数.

主要成果:

辐射诱导的热像素在黑暗环境中显著影响暗信号不均性,长时间的整合时间和随机的电报信号.
热像素归因于复杂的集群缺陷.
导致热像素的缺陷能量水平位于中间隙附近.

结论:

由质子辐射引起的热像素对CMOS图像传感器性能构成重大挑战,特别是在低光条件下.
了解缺陷结构和能量水平对于减轻热像素效应至关重要.
对缺陷被动化或减轻策略的进一步研究是有必要的.

关键词:

背面照明的CMOS图像传感器移位损伤的影响移位损伤影响热的像素热的像素质子辐射辐射的质子辐射.一个随机的电报信号.

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