TI-LGAD

Matias Senger1, Anna Macchiolo1, Ben Kilminster1

  • 1Physics Institute, University of Zurich, Irchel Campus, 8057 Zurich, Switzerland.

PubMed
概括

沟隔离的低利雪崩二极管 (TI-LGADs) 通过用沟取代传统的p-stop终端来提高小像素的填充因子. 这一进步对于在高能物理学中精确检测带电粒子至关重要.