关于TI-LGAD技术的全面描述
Matias Senger1, Anna Macchiolo1, Ben Kilminster1
1Physics Institute, University of Zurich, Irchel Campus, 8057 Zurich, Switzerland.
Sensors (Basel, Switzerland)
|July 14, 2023
概括
沟隔离的低利雪崩二极管 (TI-LGADs) 通过用沟取代传统的p-stop终端来提高小像素的填充因子. 这一进步对于在高能物理学中精确检测带电粒子至关重要.
科学领域:
- 半导体设备物理学 半导体设备物理
- 粒子探测器技术的技术
- 高能物理仪器仪表 高能物理仪器仪表
背景情况:
- 像素化低收益雪崩二极管 (LGADs) 为充电粒子检测提供精确的空间和时间测量.
- 传统的LGAD设计由于电气终端区域而减少了活性区域 (填充因子),限制了小像素应用.
研究的目的:
- 为了呈现TI-RD50生产的系统性表征,第一个专门用于沟隔离LGAD (TI-LGAD) 技术.
- 评估TI-LGADs在克服传统LGADs填充因子限制方面的有效性.
- 为了比较TI-LGAD设计与普通LGAD的性能.
主要方法:
- 使用沟隔离而不是p-stop结构制造TI-LGAD.
- 系统地描述TI-RD50的生产运行.
- 基于像素间距离的设计的测量和排名.
- 在TI-LGAD和普通LGAD之间进行时间分辨率的比较.
主要成果:
- TI-LGAD显著减少了无增益区域,使得具有足够填充因子的小像素能够出现.
- 这项研究根据测量的像素间距离对TI-LGAD设计进行了排名.
- TI-LGADs的时间分辨率与普通LGADs的时间分辨率相比较,显示出具有竞争力的性能.
结论:
- 沟隔离是一种有效的策略,可以增强像素化LGAD的填充因子.
- TI-LGAD技术有助于开发更小,更高效的像素来检测带电粒子.
- TI-RD50的生产证明了TI-LGAD在未来探测器应用中的可行性和潜力.
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