在范德瓦尔斯的多铁基CuBiP2Se6/GdClBr异构连接中,裂和可切换的半金属性
Kai Zhang1, Xiaocha Wang1, Wenbo Mi2
1Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China. wangxc@email.tjut.edu.cn.
Physical chemistry chemical physics : PCCP
|July 14, 2023
概括
这项研究探讨了GdClBr/CuBiP2Se6多铁异质连接,揭示了可调节的电子和磁性特性,这些特性对于自旋电子设备至关重要. 电极化和应变显著改变了它的半导体到半金属的过渡和磁性异构性.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 多铁范德瓦尔斯 (vdW) 异质连接表现出显著的磁电合,对于先进的自旋电子应用至关重要.
- 了解电子结构,磁性特性和外部刺激之间的相互作用是设计新型电子设备的关键.
研究的目的:
- 为了研究GdClBr/CuBiP2Se6 vdW多铁异质连接的电子结构和磁性特性.
- 探索电极化和双轴应变对异构连接的特性的影响.
- 评估这种异质连接在自旋电子器件应用中的潜力.
主要方法:
- 用第一原则计算来研究电子和磁性特性.
- 系统地分析了铁电极化逆转和变化的双轴应变的影响.
主要成果:
- 铁电 CuBiP2Se6 显示由于电荷转移和 Zeeman 场导致的自旋分裂.
- CuBiP2Se6的电极化显著调节异质连接的电子和磁性.
- 在铁电极化反转时,GdClBr从半导体转变为半金属,其基里温度为239K.
- 磁性异性质可通过双轴应变调节,在压力应变下有利于垂直异性质.
结论:
- 该GdClBr/CuBiP2Se6 vdW异质连接显示了可调节的磁电合和磁性特性.
- 应变工程提供了一种控制磁性异构和库里温度的方法.
- 这种异质连接对未来的自旋电子器件开发充满希望.
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