相关实验视频

Updated: Jul 23, 2025

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

Published on: October 12, 2019

在工程边缘嵌入的范德瓦尔斯结构中强大的散装光伏效应

Zihan Liang¹, Xin Zhou², Le Zhang¹

¹Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China.

Nature communications

|July 15, 2023

概括

我们展示了一个新的平台,用于研究使用工程范德瓦尔斯纳米边缘的批量光伏效应 (BPVE). 这种方法为提高太阳能转换效率超越传统限制提供了一种新的战略.

科学领域:

凝聚物质物理学凝聚物质物理学
材料科学材料科学材料科学
非线性光学是非线性光学.

背景情况:

大量光伏效应 (BPVE) 是第二阶非线性光学现象.
在太阳能转换方面,BPVE提供了一条超越Shockley-Quiesser极限的途径.
材料的量子几何性质决定了BPVE.

研究的目的:

为BPVE研究提出和研究一个有效的平台.
在工程范德瓦尔斯 (vdW) 纳米结构中探索BPVE.
了解结构方向和光极化对BPVE的影响.

主要方法:

制造具有嵌入纳米边缘的vdW同型或异型结构.
使用光电流测量对BPVE的研究.
分析光电流对边缘方向和光极化的依赖.

主要成果:

由BPVE引起的光电流对边缘嵌入结构的方向高度敏感.
在左边和右边嵌入结构之间观察到逆光电流极性.
该研究可视化了VDW纳米边缘中独特的光电子效应.

结论:

工程化VDW纳米边缘为BPVE调查提供了一个有效的平台.
这一战略使得在设计的VDW结构中实现BPVE成为可能.
这些发现有助于提高太阳能收集效率.

更多相关视频

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

Published on: February 27, 2017

Morphology Control for Fully Printable Organic–Inorganic Bulk-heterojunction Solar Cells Based on a Ti-alkoxide and Semiconducting Polymer

Morphology Control for Fully Printable Organic–Inorganic Bulk-heterojunction Solar Cells Based on a Ti-alkoxide and Semiconducting Polymer

Published on: January 10, 2017

相关概念视频

P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...