具有杰出的介电特性的聚合物介电材料通过通过C-F空碳化对氧原子的被动化通过C-F空碳化
Tian-Yu Wang1, Xiao-Fen Li2, Ziyao Jie1
1State Key Laboratory of Control and Simulation of Power System and Generation Equipment, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China.
研究人员开发了一种新方法,可以直接使聚合物介电材料中的深陷变得无源,从而显著提高它们的电强度和用于先进电气设备的能量存储密度.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 聚合物科学 聚合物科学
背景情况:
- 先进的电气设备需要高电强度的聚合物介电材料.
- 目前的材料修改技术缺乏对深陷的直接控制,阻碍了进步.
研究的目的:
- 引入一种新的方法,用于直接使聚合物介电材料中的深陷变无源.
- 为了提高聚合物介电物的电强度和储能密度.
主要方法:
- 深陷的直接被动化.
- 纳米级微区域的电荷特征和陷参数测量.
- 密度函数理论 (DFT) 计算用于机制分析.
主要成果:
- 显著减少深陷的密度.
- 电力强度,故障强度和闪电电压的大幅增加.
- 在不影响充放电效率的情况下提高了储能密度.
结论:
- 直接深陷被动化为高性能聚合物介电材料提供了一条新的途径.
- 降低电极-电解介质接口上的陷能量水平可以增加能量储存.
- DFT分析阐明了被动化的微观物理机制.
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