同时控制光谱和定向发射率与梯度的埃普西隆接近零在As光子结构
Jae S Hwang1, Jin Xu1, Aaswath P Raman1,2
1Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, CA, 90095, USA.
Advanced materials (Deerfield Beach, Fla.)
|July 19, 2023
概括
研究人员开发了一种新的光子方法,使用杂半导体来精确控制红外热辐射. 这种方法提高了光谱带宽和定向性,用于先进的传热和传感应用.
科学领域:
- 光子学 是一个光子学.
- 材料科学 材料科学 材料科学
- 红外技术 红外技术
背景情况:
- 控制光谱带宽和热辐射的方向性在光子学中至关重要.
- 梯度近零 (ENZ) 材料提供广泛的光谱定向性,但受到材料性能的限制.
- 现有的方法在调整红外辐射的光谱和方向方面存在局限性.
研究的目的:
- 设计和演示一种新的方法,同时控制光谱峰值,带宽和红外发射率的方向性.
- 克服长波红外应用现有材料的局限性.
- 为热辐射的动态控制提供一个通用的光子平台.
主要方法:
- 使用合的III-V半导体来创建渐变ENZ光子结构.
- 在表皮上生长并表现出基于化 (InAs) 的结构.
- 多样化的兴奋剂度概况和薄膜厚度来调整排放性质.
主要成果:
- 从基于InAs的梯度ENZ光子结构中证明了宽带定向发射.
- 展示了基于兴奋剂和厚度的可调节的光谱带宽和定向范围.
- 实现了对红外辐射特征的动态控制.
结论:
- 开发的方法提供了一个多功能且易于制造的光子平台.
- 这种方法可以精确控制宽带的光谱和定向发射率.
- 该技术在先进的传热和红外传感方面具有潜在的应用.
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