用紫外线可见光谱学精确测定半导体带隙的理想化塔克图:对立方甲的案例研究
Hong Zhong1, Fengjiao Pan2, Shuai Yue3,4
1Department of Electrical and Computer Engineering and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, Texas 77204, United States.
The journal of physical chemistry letters
|July 19, 2023
概括
这项研究引入了一种新方法,通过在Tauc绘图之前去除基线吸收来准确确定半导体带隙. 这解决了差异,并为像立方甲 (c-BAs) 这样的材料提供了可靠的带隙值.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 半导体物理 半导体物理
背景情况:
- 塔克图是半导体带隙测定的标准.
- 在Tauc图表中的基线吸收导致带隙值的差异.
研究的目的:
- 为了调查Tauc图片中基线吸收的起源.
- 提出和验证一种用于准确测定带隙的新方法.
- 为了解决立方甲 (c-BAs) 的带隙差异.
主要方法:
- 模拟不同基线吸收的陶克图形.
- 开发一种新的方法,通过移除基线来理想化吸收光谱.
- 使用传输光谱对新方法进行实验验证.
主要成果:
- 基线吸收显著影响塔克图谱的推断,并导致错误.
- 提出的基线去除方法有效地理想化了吸收光谱.
- 对c-BAs获得了1.835 eV的精确带隙,解决了之前的差异.
结论:
- 新方法通过解决基线吸收问题来准确确定带隙.
- 该技术适用于直接和间接带隙半导体.
- 它对于从传输或分散反射频谱中获得精确的带隙值至关重要.
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