SnO2处理对双阴离子双化物矿中离子分布的作用
Holland Hysmith1, So Yeon Park2, Jonghee Yang3
1Bredesen Center for Interdisciplinary Research, University of Tennessee, Knoxville, Tennessee 37996, United States.
ACS applied materials & interfaces
|July 20, 2023
概括
混合基板加工技术通过减少应变和通过K+离子使缺陷无源化来提高金属化物矿 (MHP) 设备性能,从而改善电流生成和稳定性.
科学领域:
- 材料科学 材料科学 材料科学
- 储能 储能 储能 储能 储能 储能
- 薄膜技术 薄膜技术
背景情况:
- 金属化物矿 (MHP) 薄膜对于高效的低碳能源设备至关重要.
- 基质加工显著影响MHP性能,影响离子迁移和应变.
- 优化MHP设备需要了解基质诱导的现象.
研究的目的:
- 研究基质加工技术如何影响MHP行为,特别是离子迁移和应变.
- 通过混合化学浴沉积 (CBD) 和纳米粒子 SnO2 基质方法来证明 (FAPbI3) 0.97(MAPbBr3) 0.03 MHP 薄膜的性能提升.
- 阐明K+离子分布在矿/SnO2界面缺陷被动化中的作用.
主要方法:
- 混合化学浴沉积 (CBD) 与纳米粒子 SnO2 基板加工相结合.
- 用X射线衍射 (XRD) 分析SnO2基板中的格子应变.
- 导电原子力显微镜 (c-AFM) 用于测量MHP膜的空间导电性.
- 飞行时间的二次电离质谱 (ToF-SIMS) 来观察K+离子分布.
主要成果:
- 混合处理减少了SnO2网格中的微压力.
- 来自K-Cl处理的K+离子分布到被动接口缺陷中.
- 混合处理的MHP片在明暗条件下都表现出更高的电流产生.
- ToF-SIMS证实了矿/SnO2接口的K+被动化,与改进的功率转换效率 (PCE) 和稳定性相关.
结论:
- 混合CBD和SnO2基质加工显著提高MHP设备的性能.
- 减少格子应变和通过K+离子使接口缺陷无源化是提高MHP效率和稳定的关键.
- 了解矿/SnO2接口上的离子分布对于减少缺陷和优化MHP设备至关重要.
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