GeSn线

Youngmin Kim1, Simone Assali2, Hyo-Jun Joo1

  • 1School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.

Nature communications
|July 20, 2023
PubMed
概括

研究人员在单个/锡 (Ge/GeSn) 芯/外纳米线中展示了空腔增强的光发光. 这一突破使光子集成电路的紧,与兼容的红外纳米激光器成为可能.