在CoFe3-O4/Pt的原子利接口上的内在磁性近距离效应,由分子束Epitaxy生长
Shoto Nodo1, Ichiro Yamane1, Motohiro Suzuki2
1Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-8628, Japan.
ACS omega
|July 24, 2023
概括
在铁/白金双层中异常的霍尔效应源于界面上的磁性近距离效应. 这种效应对接口结构,特别是氧离子敏感,影响诱导的磁矩.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 表面科学是一门学科.
背景情况:
- 对磁性/非磁性异构结构的界面现象的研究对于自旋电子应用至关重要.
- 磁性近距离效应 (MPE) 可以在与铁磁体相邻的非磁性材料中诱导磁性.
- 了解接口结构和MPE之间的关系是控制材料属性的关键.
研究的目的:
- 为了阐明Cobalt Ferrite (CoFe3O4,CFO) /Platinum (Pt) 双层中异常霍尔效应 (AHE) 的起源.
- 探索接口结构对CFO/Pt接口的磁性近距离效应 (MPE) 的影响.
- 作为接口工程的函数,将传输特性 (AHE) 与磁性特性 (XMCD) 相关联起来.
主要方法:
- 使用分子束表 (MBE) 制造CFO/Pt双层.
- 测量异常的霍尔效应 (AHE) 来探测运输特性.
- 在Pt L-边缘,Co L-边缘和Fe L-边缘进行X射线磁圆二极化 (XMCD) 光谱.
- 传输电子显微镜 (TEM) 用于接口结构分析.
主要成果:
- 证实CFO/Pt双层中的AHE来源于界面上的MPE.
- 只有在600°C下沉积的样本中,在Pt L边缘观察到显著的XMCD信号,这表明MPE对接口结构的敏感性.
- TEM和特定元素的XMCD没有直接证据表明原子扩散或合金,这表明MPE不仅仅依赖于这些因素.
结论:
- 在CFO/Pt双层中,磁性近距离效应对运输特性如AHE具有强大作用.
- 在Pt中诱导的磁矩对界面结构的微妙变化非常敏感,例如界面氧离子的存在.
- 接口工程对于在这种异构结构中量身定制磁性和自旋电子功能至关重要.
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