在Al-Ga-As-Sn-Bi系统中估计相互作用参数
Vladimir Khvostikov1, Olga Khvostikova1, Nataliia Potapovich1
1Ioffe Institute, Politechnicheskaya 26, St. Petersburg, 194021, Russia.
Heliyon
|July 24, 2023
概括
本研究介绍了一种新的五组件系统,用于为光伏转换器和LED生长厚厚的甲 (AlGaAs) 层. 新方法克服了导电性问题,使AlGaAs层中的电子度提高.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 光电学是指光电子产品.
背景情况:
- 厚 (50-100微米) 的透明梯度折射率层对于基于GaAs的高功率光伏转换器和LED结构至关重要.
- 液相表是培养这些厚层的关键技术.
- 一个重大挑战是,在特定成分 (x ≈ 40%) 的甲 (AlxGa1-xAs) 电导率的降低.
研究的目的:
- 提出一种新的五组件系统 (Al-Ga-As-Sn-Bi),以解决AlxGa1-xAs.中的导电性降低问题.
- 模拟液体和固体等温对 AlxGa1-xAs 从特定的 Ga-融化组成的生长.
- 通过实验验证培养AlGaAs层的导电性和兴奋剂特性.
主要方法:
- 使用准正规溶液模型来确定Al-Ga-As-Sn-Bi液相系统中的相互作用参数 (αij).
- 在900°C下模拟液体和固体等温体,用于从含有比斯 (Bi) 和锡 (Sn) 的Ga-中获得AlxGa1-xAs的生长.
- 采用霍尔效应测量来描述成长的AlGaAs层的导电性和电子度.
主要成果:
- 计算的相互作用参数 (αij) 用于建模相位平衡.
- 液体和固体等温体与实验数据显示出令人满意的一致性.
- 霍尔效应测量证实,从含比斯的融中生长的AlGaAs层表现出n型导电性.
- 从混合的Ga-Bi溶液中生长时用锡 (Sn) 进行注,有效地增加了AlGaAs层中的电子度.
结论:
- 拟议的五组件Al-Ga-As-Sn-Bi系统有效地克服了AlxGa1-xAs.As中的导电性降低问题.
- 石作为中性溶剂,而锡作为有效的n型剂.
- 这种方法使得高质量的n型AlGaAs层能够生长,具有受控的电子度,适用于先进的光电子设备.
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