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Updated: Jul 22, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

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过渡金属二甲基基因基封闭层对相变异构内存性能的影响

Tae Ho Kim1, Seung Woo Park1, Ho Jin Lee1

  • 1School of Electrical Engineering, Korea University, Seoul, Seongbuk-gu, 02841, South Korea.

Small (Weinheim an der Bergstrasse, Germany)
|July 24, 2023
PubMed
概括

这项研究使用过渡金属二甲基化物 (TMD) 增强相变异构 (PCH) 记忆. 像NiTe2和MoTe2这样的新型TMD显著降低了功耗,并提高了非挥发性内存应用的耐用性.

关键词:
凝聚力的能源凝聚力.监禁材料的使用情况阶段变化异构结构内存的记忆.热稳定性的热稳定性过渡金属二甲基二甲基化物

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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication08:50

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