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相关概念视频

Ferromagnetism01:31

Ferromagnetism

2.4K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.4K
Non-ohmic Devices00:51

Non-ohmic Devices

1.1K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.1K
MOS Capacitor01:25

MOS Capacitor

839
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
839
Types Of Superconductors01:28

Types Of Superconductors

1.0K
A superconductor is a substance that offers zero resistance to the electric current when it drops below a critical temperature. Zero resistance is not the only interesting phenomenon as materials reach their transition temperatures. A second effect is the exclusion of magnetic fields. This is known as the Meissner effect. A light, permanent magnet placed over a superconducting sample will levitate in a stable position above the superconductor. High-speed trains that levitate on strong...
1.0K
Types of Semiconductors01:20

Types of Semiconductors

663
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
663
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

390
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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相关实验视频

Updated: Jul 22, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

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用于非易失性记忆应用的二维铁基材料.

Hao Wang1, Yao Wen1, Hui Zeng1

  • 1Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China.

Advanced materials (Deerfield Beach, Fla.)
|July 24, 2023
PubMed
概括
此摘要是机器生成的。

新兴的二维铁性材料为集成电路中的高速,低功耗非挥发性内存提供了有前途的途径. 这篇评论强调了它们在先进的存储器设备中的潜力.

关键词:
两维材料是二维材料.铁电器 铁电器 铁电器这些磁铁是磁铁.多种铁路的多种铁路不易挥发的记忆 无易挥发的记忆

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
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Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

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相关实验视频

Last Updated: Jul 22, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
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Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

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科学领域:

  • 凝聚物质物理学 凝聚物质物理学
  • 材料科学 材料科学 材料科学
  • 纳米技术 纳米技术

背景情况:

  • 铁性材料是开发先进非挥发性内存技术的关键.
  • 具有远程铁性顺序的二维 (2D) 材料正在获得研究兴趣.
  • 这些二维铁性材料能够实现高速,低功耗和高密度的内存应用.

研究的目的:

  • 系统地审查新出现的二维铁性材料.
  • 为了强调他们最近在非易失性记忆应用方面的研究.
  • 为二维磁性,铁电和多铁材料和设备提出未来前景.

主要方法:

  • 对二维铁性材料的系统文献综述.
  • 对非易失性记忆应用的研究进行分析.
  • 评估设备的性能和潜力.

主要成果:

  • 二维铁性材料和异构结构对非易失性记忆具有令人印象深刻的特性.
  • 原子光滑接口和超薄厚度对于设备性能至关重要.
  • 开发基于这些材料的先进记忆器件存在巨大的潜力.

结论:

  • 对于未来的非易失性记忆,二维铁性材料至关重要.
  • 对二维磁性,铁电和多铁材料的进一步研究是有必要的.
  • 通过使用这些新兴的二维材料和异构结构,可以实现先进的内存设备.