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在单层MoS₂中观察丰富的缺陷动力学

Harikrishnan Ravichandran¹, Theresia Knobloch², Andrew Pannone¹

¹Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States.

|July 25, 2023

概括

研究单层二硫化物 (MoS) 场效应晶体管 (FET) 的缺陷揭示了复杂的动态. 了解这些缺陷对于提高二维半导体设备的性能和可靠性至关重要.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

缺陷严重影响纳米电子设备的性能和可靠性.
原子薄的二维 (2D) 半导体,如单层二硫化物 (MoS),是现代晶体管中的关键组件.
了解二维场效应晶体管 (FET) 的缺陷行为对于推进设备技术至关重要.

研究的目的:

在单层MoS₂FET中全面调查缺陷动态.
为了将观察到的缺陷行为与特定的缺陷类型和设备操作条件相关联.
提供关于二维半导体设备缺陷所带来的可靠性挑战的见解.

主要方法:

使用大面积生长技术制造单层MoS₂ FET.
使用原子层沉积 (ALD) 进行Al₂O₃门介电整合.
通过在不同的门偏差和温度下测量源至排水电流来描述设备性能.
使用随机电报信号 (RTS) 分析分析当前波动.

主要成果:

观察到源至排水电流中的随机电报信号 (RTS),表明道和单个缺陷之间的电荷转移.
确定了异常和巨大的RTS事件,表明局部电流拥挤和复杂的缺陷相互作用.
模拟了RTS的温度和门偏差依赖性,以推断可能的缺陷候选者,如氧空缺或间隙.
在单层MoS₂通道和介电接口上展示了丰富的缺陷动力学.

结论:

缺陷动力学显著影响单层MoS₂FETs的电气特性.
观察到的RTS现象为探测2D材料中的个体缺陷行为提供了一个强大的工具.
识别特定的缺陷类型及其机制对于减轻性能限制和提高未来二维电子设备的可靠性至关重要.

关键词:

Al2O3 的使用情况.在MoS2的基础上,MoS2 充电陷可以捕捉电荷.缺陷缺陷缺陷缺陷缺陷场效应晶体管的领域效应晶体管.随机发送的电报信号是随机的可靠性可靠性可靠性

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