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Updated: Jul 21, 2025

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes
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Published on: March 21, 2018

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高载波移动性和h-BN/SnSe2异构结构的可控制电子属性

Tong Liang1, Chencheng Hu1, Mengsi Lou1

  • 1Yellow River Conservancy Technical Institute, Kaifeng 475004, China.

Langmuir : the ACS journal of surfaces and colloids
|July 26, 2023
PubMed
概括

我们创建了一个六角化 (h-BN) 和锡化 (SnSe2) 层叠的材料. 这种新的范德瓦尔斯异构结构显示了增强的电子和光学特性,开辟了新的应用.

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Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
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Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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P-N junction

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Energy Bands in Solids

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