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Updated: Jul 21, 2025
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Single Molecule Fluorescence Microscopy on Planar Supported Bilayers
Published on: October 31, 2015
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用于宽光谱范围的CMOS图像传感器,具有>90%的量子效率
Olli E Setälä1, Martin J Prest2, Konstantin D Stefanov2
1Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, Espoo, FI-02150, Finland.
Small (Weinheim an der Bergstrasse, Germany)
|July 26, 2023
概括
表面纳米工程通过提高光谱范围和光敏度来增强互补的金属氧化物半导体 (CMOS) 图像传感器 (CIS). 这种新的方法减少了暗电流,为传统的性能限制方法提供了一个有希望的替代方案.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 光电学是指光电子产品.
背景情况:
- 互补金属氧化物半导体 (CMOS) 图像传感器 (CIS) 在现代技术中至关重要.
- 像反射涂层这样的传统方法通过造成光学和电气损失来限制CIS的性能.
研究的目的:
- 研究表面纳米工程对CIS性能的影响.
- 用纳米结构表面和原子层沉积来取代传统方法,以提高设备功能.
主要方法:
- 应用表面纳米工程,包括纳米结构表面和原子层沉积被动化.
- 使用商用背面照明的CIS进行测试.
- 评估的光谱范围,光敏度,暗电流和光响应均性.
主要成果:
- 在300-700nm波长范围内实现了>90%的量子效率.
- 减少了黑暗电流的三倍.
- 观察到略有改善的光响应均性,并注意到由于纳米结构的潜在光学交叉声.
结论:
- 表面纳米工程显著提高了CIS光谱范围和光敏度.
- 这种技术为改善CIS性能提供了比传统方法更好的替代方案.
- 表面纳米工程对于各种CIS应用具有巨大的潜力.
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