对于β-Ga2O3场效应晶体管的2D无形GaOX门介电
Sanghyun Moon1, Donggyu Lee1, Jehwan Park1
1School of Chemical and Biological Engineering, Seoul National University, Seoul 08826, Republic of Korea.
ACS applied materials & interfaces
|July 27, 2023
概括
研究人员开发了一种新的2D无形氧化物 (GaOx) 介电器,用于金属绝缘体半导体场效应晶体管 (MISFET). 这一突破使得使用β-氧化物 (β-Ga2O3) 通道的稳定,高性能MISFETs成为可能.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 纳米技术纳米技术
背景情况:
- 制造金属绝缘体半导体场效应晶体管 (MISFET) 需要合适的门介电材料,由于缺乏高质量的原生氧化物,这对复合半导体具有挑战性.
- β-阶段氧化物 (β-Ga2O3) 是一个有前途的下一代功率半导体材料,由于其超宽的能量带隙 (4.5-4.9 eV).
研究的目的:
- 为β-Ga2O3 MISFETs开发和描述一种新的2D无形氧化物 (GaOx) 门介电器.
- 为了研究使用新的GaOx介电和β-Ga2O3通道制造的MISFET的性能和稳定性.
主要方法:
- 使用液体挤压技术制造具有精确控制的原子尺度厚度的2D无形氧化物 (GaOx).
- 将GaOx介电器与β-Ga2O3导电纳米层集成,形成MISFET设备.
- 描述MISFET性能,包括稳定性,门电压摆动,电流开/关比,载体移动性和故障电压.
主要成果:
- 一个稳定的β-Ga2O3 MISFET在高达250°C的温度下运行,使用2D无形GaOx介电器成功制造出来.
- 该GaOx介电器与β-Ga2O3通道形成了高质量,均和可扩展的接口.
- 制造的MISFET表现出了广泛的网关电压波动 (+5V),高电流开/关比,适度的移动性和~138V的故障电压.
结论:
- 液体挤压技术可以在室温下制造2D无形GaOx门介电材料.
- 开发的GaOx/β-Ga2O3 MIS结构适合轻松制造高性能MISFET设备.
- 这项工作为基于化合物半导体的功率电子产品中门介电挑战提供了可行的解决方案.
相关概念视频
01:25MOS Capacitor
839
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
839
01:16MOSFET
515
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
515
01:22MOSFET: Enhancement Mode
382
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
382
01:17Characteristics of MOSFET
420
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
420
01:20MOSFET: Depletion Mode
395
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
395
01:29Field Effect Transistor
475
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
475