相关实验视频

Updated: Jul 21, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.2K

化学电位梯度诱导在表轴TiN/MgO接口处形成基肯达尔空隙

Xiaoman Zhang1, W J Meng1, Andrew C Meng2

  • 1Department of Mechanical and Industrial Engineering, Louisiana State University, Baton Rouge, LA 70803, USA. wmeng1@lsu.edu.

Nanoscale
|July 27, 2023
PubMed
概括

在化 (TiN) /氧化 (MgO) 接口上观察到Kirkendall空隙,表明快速扩散. 这一发现表明了在薄膜接口中设计空缺职位的新方法.

更多相关视频

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition09:45

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

Published on: July 26, 2016

12.4K
Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures11:54

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Published on: February 8, 2018

10.3K

相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
390