化SnS范德瓦尔斯晶体中的缺陷配对:光发射和扫描道显微镜研究
Damla Yesilpinar1, Martin Vondráček1, Patrik Čermák2
1Institute of Physics, AV ČR, Na Slovance 1999/2, 182 21 Praha 8, Czechia. honolka@fzu.cz.
锡硫化物 (SnS) 晶体中的铁杂质会产生改变电子性能的缺陷. 这些铁引起的缺陷导致电子兴奋剂,减少半导体.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 半导体物理 半导体物理
背景情况:
- 硫化 (SnS) 是一种p型半导体,其原生缺陷影响其性能.
- 了解缺陷行为对于为电子应用量身定制SNS至关重要.
研究的目的:
- 研究低度铁 (Fe) 兴奋剂对SnS范德瓦尔斯晶体物理和电子性能的影响.
- 为了确定由铁合并形成的特定缺陷结构及其对载体度的影响.
主要方法:
- 扫描道显微镜 (STM) 用于原子尺度缺陷成像.
- 光辐射光谱检测波段结构的修改.
- 开始密度函数理论 (DFT) 模拟用于缺陷建模.
- 霍尔运输测量以量化载体度变化.
主要成果:
- 铁杂质在SnS中优先形成在锡空位附近的间歇性Feint缺陷 (VSn).
- 这些结合 (VSn,Feint) 缺陷对表现出类似于捐赠者的行为,补偿类似于接受者的VSn缺陷.
- 观察到p型载体度的降低,与电子兴奋剂相一致.
结论:
- 在SnS中铁导致形成特定的缺陷复合体,从而改变材料的电子特性.
- 观察到的电子兴奋剂和载体补偿为基于SnS的设备的缺陷工程提供了洞察力.
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