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消除在无接体量子点场效应晶体管中的偏向应力效应
Jason Tolentino1, Markelle Gibbs2, Alex Abelson3
1Department of Chemical Engineering and Materials Science, University of California, Irvine, Irvine, California 92697, USA.
The Journal of chemical physics
|July 28, 2023
概括
在体量子点场效应晶体管 (QD FET) 中,偏差应力效应 (BSE) 通过使用H2S气体和原子层沉积 (ALD) 来消除. 这一突破为先进的电子应用提供了稳定,无歇斯底里,具有高电子流动性的QD FET.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 半导体物理 半导体物理
背景情况:
- 体量子点场效应晶体管 (QD FET) 由于偏差应力效应 (BSE) 而表现出电流电压歇斯底里.
- 这种歇斯底里症使电荷传输的基本研究复杂化,并限制了QD FET在电子中的实际应用.
研究的目的:
- 在n通道 PbSe QD FET中消除偏差应力效应 (BSE).
- 为了实现稳定和无歇斯底里的设备特性,以提高QD FET性能.
- 为了能够对QD固体中电荷运输依赖性的结论性研究.
主要方法:
- 使用硫化 (H2S) 气体去除量子点 (QD) 连接体.
- 通过原子层沉积 (ALD) 用 (Al2O3) 填充 QD 薄膜.
- 用H2S处理的,含填充的PbSe QD FET的制造和表征.
主要成果:
- 完全消除电流-电压歇斯底里,证明了总的短期稳定性.
- 无限期的空气稳定性,表明设备的长期可靠性.
- 在 QD FET 中实现高电子流动性,可达 14 cm2 V-1 s-1.
- 确定了电子陷和质子漂移是BSE的原因,这两者都通过H2S/处理得到解决.
结论:
- H2S/处理通过创建无接口并防止离子迁移,有效地消除了PbSe QD FET中的BSE.
- 这些稳定,无歇斯底里的QD FET适用于先进的QD电路和光电子设备.
- 矩阵工程方法为改善载体流动性和在其他基于纳米晶体的电子系统中充电运输提供了一条途径.
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