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Updated: Jul 21, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

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盐诱导的高密度空隙丰富的2DMoS2为高效的进化.

Ping Man1,2,3, Shan Jiang4,5, Ka Ho Leung1,2,3

  • 1Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, 999077, P. R. China.

Advanced materials (Deerfield Beach, Fla.)
|July 28, 2023
PubMed
概括

一种新的盐辅助化学蒸气沉积 (CVD) 方法合成超高密度空位丰富的二硫化物 (MoS2) 用于增强演变反应. 这种方法提供了一种可控和非破坏性的方法来创造硫空缺,提高催化性能.

关键词:
2D MoS2 2D MoS2 2D MoS2 2D MoS2 2D MoS2 2D MoS2 2D MoS2 2D MoS2 2D MoS2 2D MoS2 2D MoS2 2D MoS2 2D MoS2 2D MoS2 2D MoS2 2D MoS2 2D MoS2化学蒸气沉积 化学蒸气沉积水素演化反应反应的反应.用盐辅助的盐.在硫空缺的职位.

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