一条新的线路道化SiGe/Si iTFET,配有控制门,用于抑制泄漏和改善下值摆动
Jyi-Tsong Lin1, Shao-Cheng Weng2
1Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan, ROC. jtlin@ee.nsysu.edu.tw.
Discover nano
|July 28, 2023
概括
这项研究引入了一种新的控制门线-/道场效应晶体管 (CG-Line SiGe/Si iTFET),可以显著减少泄漏电流并提高性能. 新设计增强了低功耗电子产品的开/关电流比率和下值波动.
科学领域:
- 半导体设备物理学 半导体设备物理
- 材料科学是一种材料科学.
- 纳米电子学纳米电子学
背景情况:
- 道场效应晶体管 (TFET) 提供了低功耗运行的潜力,但面临漏电流和性能方面的挑战.
- 优化门控制和最大限度地减少OFF状态中的频段重叠对于改善TFET特性至关重要.
研究的目的:
- 介绍一个新的CG-Line SiGe/Si iTFET结构,旨在提高性能和减少泄漏电流.
- 调查控制门和金属半导体接触对TFET操作的影响.
主要方法:
- 设备制造可行性分析.
- 严格的二维模拟研究.
- 使用Schottky接触特征来形成PN连接点.
主要成果:
- 在OFF状态下有效抑制能量带重叠,从而减少泄漏电流.
- 在道接口上改进了门控制,增强了ON状态电流和下值摆动.
- 同时实现了改进的下值波动和高开/关电流比.
结论:
- 拟议的CG-Line SiGe/Si iTFET结构显示了低功耗应用的巨大潜力.
- 设备设计避免了复杂的兴奋剂配置文件和回火步骤,减少了热预算.
- 创新的结构为下一代高性能,低功耗半导体设备提供了一个有前途的途径.
更多相关视频
11:42Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
15.5K
11:33All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
9.7K
相关概念视频
Biasing of FET
318
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
318
MOSFET: Enhancement Mode
382
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
382
Field Effect Transistor
475
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
475
MOSFET: Depletion Mode
395
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
395
MOSFET
515
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
515
Characteristics of MOSFET
420
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
420
