Design Example: Capacitance Multiplier Circuit
Understanding Memory
Modeling of Diode Forward Characteristics
Modeling of Diode Reverse Characteristics
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Characterization of Anisotropic Leaky Mode Modulators for Holovideo
Published on: March 19, 2016
Cheng Wang1, Zhen Mei1,2, Jun Li1
1School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
研究人员开发了新的方法来提高三维 (3D) NAND闪存的可靠性. 这些技术优化读取电压值,减少错误并提高数据存储系统的性能.
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