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相关概念视频

Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

830
In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
830
Understanding Memory01:19

Understanding Memory

542
Memory is the retention of information or experiences over time, facilitated through three main processes: encoding, storage, and retrieval. Encoding is the process of inputting information into the memory system. For instance, when listening to a lecture, watching a play, reading a book, or having a conversation, the brain is actively encoding information. This initial stage involves transforming sensory input into a form that can be processed and stored by the brain. Various factors, such as...
542
Modeling of Diode Forward Characteristics01:19

Modeling of Diode Forward Characteristics

574
Understanding the behavior of diodes when forward-biased is a fundamental aspect of electronic circuit design and analysis. This analysis primarily utilizes two models: the exponential diode model and the constant-voltage-drop model. The exponential model comes into play when the source voltage exceeds 0.5 volts, pushing the diode current to rise exponentially above the saturation current. This relationship is graphically depicted in the current-voltage (I-V) curve, illustrating the diode's...
574
Modeling of Diode Reverse Characteristics01:14

Modeling of Diode Reverse Characteristics

310
In electronic circuits, reverse-biased diode configurations are critical for regulating voltage levels. Zener diodes exploit the reverse breakdown phenomenon and exhibit a controlled breakdown at a specific Zener voltage (VZ). They are designed to maintain a constant voltage across their terminals and are commonly used for voltage regulation in circuits.
When a reverse voltage applied to a Zener diode exceeds its breakdown voltage, the diode enters the breakdown region. At this point, the...
310
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

378
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
378
Block Diagram Reduction01:22

Block Diagram Reduction

244
The process of deriving the transfer function of a control system often involves reducing its block diagram to a single block. This simplification can be achieved through a series of strategic operations, including relocating branch points and comparators. These operations preserve the overall function of the system while allowing for easier manipulation and combination of blocks.
The first step in this process is the identification and relocation of a branch point. A branch point, where a...
244

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相关实验视频

Updated: Jul 21, 2025

Characterization of Anisotropic Leaky Mode Modulators for Holovideo
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道建模和量子化设计为3D NAND闪存的设计.

Cheng Wang1, Zhen Mei1,2, Jun Li1

  • 1School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.

Entropy (Basel, Switzerland)
|July 29, 2023
PubMed
概括
此摘要是机器生成的。

研究人员开发了新的方法来提高三维 (3D) NAND闪存的可靠性. 这些技术优化读取电压值,减少错误并提高数据存储系统的性能.

关键词:
三维闪存是3D的闪存.在 LDPC 编码.道建模 道建模信息理论信息理论定量化定量化是什么阅读电压的门值.

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科学领域:

  • 电气工程 电气工程
  • 计算机科学 计算机科学
  • 材料科学 材料科学 材料科学

背景情况:

  • 二维 (2D) NAND闪存面临着扩展限制.
  • 三维 (3D) NAND闪存通过垂直堆叠提供了更高的存储密度.
  • 3D NAND架构引入了新的错误来源,影响了系统可靠性.

研究的目的:

  • 为3D NAND闪存推导通道概率密度函数,考虑主要错误来源.
  • 开发一种用于设计多层3D闪存中的量子化指标.
  • 提出优化阅读电压值的方法,以提高可靠性和性能.

主要方法:

  • 导出用于3D NAND闪存的通道概率密度函数.
  • 对于多层3D闪存来说,相互信息 (MI) 的导出.
  • 开发一个动态编程算法,共同优化读电压值 (MMI).
  • 开发一种基于MI衍生 (MID) 的方法,用于错误纠正代码 (ECC) 的硬决策解码 (HDD).

主要成果:

  • 联合优化的读电压值实现了接近层特定优化的性能,读取延迟减少.
  • 基于MID的MMI量化器显示了ECC的HDD的近乎最佳性能.
  • 导出的通道概率密度函数准确地模拟了3D NAND错误行为.

结论:

  • 提出的方法有效地解决了3D NAND闪存中的可靠性挑战.
  • 优化的读电压值显著提高了系统性能,并减少了延迟.
  • 基于MID的方法为3D NAND系统中的量化器设计提供了有效的解决方案.