沉积薄的电导层的锡 (II) 硫化物在铜表面使用水力金方法:电学和光学研究
Anna Komenda1,2, Marek Wojnicki1, Dzmitry Kharytonau2,3
1Faculty of Non-Ferrous Metals, AGH University of Science and Technology, Mickiewicza Ave. 30, 30-059 Krakow, Poland.
Materials (Basel, Switzerland)
|July 29, 2023
概括
用化学浴方法合成 (II) 硫化 (SnS) 薄膜. 该研究优化了沉积温度和表面活性剂的使用,产生了具有1.27 eV带间隙的紧SnS薄膜.
科学领域:
- 材料科学 材料科学 材料科学
- 固态化学 固态化学
- 薄膜沉积的情况
背景情况:
- 锡 (II) 硫化物 (SnS) 是一种有前途的半导体材料,用于各种电子应用.
- 了解兴奋剂和沉积参数对SnS薄膜特性的影响,对于设备优化至关重要.
研究的目的:
- 为了研究 (Na) 兴奋剂对锡 (II) 硫化物 (SnS) 薄膜的影响.
- 为了优化铜基板上的SnS薄膜的化学浴沉积过程.
- 描述合成的SnS膜的结构,形态和光学特性.
主要方法:
- 在不同温度 (60-80°C) 的铜基板上沉积SnS薄膜的化学浴室沉积.
- 使用扫描电子显微镜 (SEM) 和能量分散式X射线分析 (EDAX) 的微结构分析.
- 通过X射线衍射 (XRD) 和使用X射线光电谱 (XPS) 的表面分析进行结构性表征.
- 通过光谱圆测量来确定波段间隙的光学特性.
主要成果:
- 紧的SnS薄膜形态在80°C时得到了实现,表面活性剂的添加使颗粒边缘圆化.
- 薄膜厚度在230nm时保持一致,而不考虑沉积参数.
- 兴奋剂影响了结晶体大小 (~44 nm),并测量了0.3 S的导电性.
- 证实Sn:S静电测量是1:1的,带间隔被确定为1.27 eV.
结论:
- 化学浴方法是有效的沉积纳化SnS薄膜与受控的属性.
- 优化的沉积条件,包括温度和表面活性剂的使用,导致改善薄膜形态和一致的厚度.
- 对于SnS来说,1.27 eV的确定带隙与现有文献一致,验证了合成方法.
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