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Updated: Jul 17, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Published on: December 5, 2015

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一项关于易平面FeSi3.5复合材料的研究,在MHz频段具有高透性和超低损失

Peng Wu1, Shengyu Yang1, Yuandong Huang1

  • 1Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Institute of Applied Magnetism, Lanzhou University, Lanzhou 730030, China.

Materials (Basel, Switzerland)
|July 29, 2023
PubMed
概括

一种易平面FeSi3.5复合材料通过降低多余损耗,显著减少MHz频率的磁性材料损失. 这一进步使磁器件能够在更高的频率上有效运行,从而提高性能.

关键词:
在MHz频段,MHz频段是MHz频段.易平面软磁性复合材料易平面软磁性复合材料过剩的损失过剩的损失超低功率损失的超低功率损失.

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