一个SiC平面MOSFET与嵌入式MOS通道二极管,以改善反向导和切换
Ping Li1,2, Jingwei Guo1, Shengdong Hu1
1Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, China.
Micromachines
|July 29, 2023
概括
一种具有嵌入式MOS通道二极管的新型碳化MOSFET显著提高了第三象限性能. 这种设计降低了二极管切入电压,并减少了用于增强功率电子应用的切换损失.
科学领域:
- 电力电子 电力电子 电力电子
- 半导体设备 半导体设备
- 材料科学 材料科学 材料科学
背景情况:
- 传统的碳化 (SiC) MOSFETs由于在自由旋转时的内在体二极管导电而遭受双极降解.
- 提高SiC MOSFET的第三象限运行和切换性能对于高效的功率转换至关重要.
研究的目的:
- 提出和研究一种新型的分裂门SiC MOSFET与嵌入式MOS通道二极管.
- 提高第三象限的性能,并减少SiC MOSFET的切换损失.
主要方法:
- 技术计算机辅助设计 (TCAD) 模拟用于研究拟议的设备.
- 开发了一个分析模型来解释MOS通道二极管降低屏障的影响.
- 分析了设备参数,包括二极管切入电压,门到排水电荷 (QGD) 和反向传输电容 (CGD).
主要成果:
- 建议使用嵌入式MOS通道二极管的SiC MOSFET显示了二极管切入电压的降低,从2.7V降至1.2V.
- 分门结构导致QGD (20对230nC/cm2) 和CGD (14对105pF/cm2) 显著降低.
- 这些改进的结果是更好的高频率功利和更低的切换损失.
结论:
- 新型分门SiC MOSFET有效抑制内在体二极管导电,防止双极性降解.
- 嵌入式MOS通道二极管提供了低电位障碍,提高了第三象限的性能.
- 该设备表现出优异的开关特性和降低的损耗,使其适用于高频应用.
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