Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

Schottky Barrier Diode01:27

Schottky Barrier Diode

402
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
402
Biasing of P-N Junction01:16

Biasing of P-N Junction

602
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
602
Diode: Forward bias01:20

Diode: Forward bias

1.1K
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
1.1K
Diode: Reverse bias01:14

Diode: Reverse bias

817
A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
817
Potentiometry: Membrane Electrodes01:15

Potentiometry: Membrane Electrodes

632
Membrane electrodes, also known as p-ion electrodes, use membranes that selectively interact with free analyte ions, generating a potential difference across the membrane. The resulting membrane potential, known as the asymmetry potential, is not zero even when analyte concentrations on both sides of the membrane are equal. The membrane's response is typically not selective to a single analyte but proportional to the concentration of all ions in the sample solution capable of interacting at...
632
Clipper Circuit01:18

Clipper Circuit

491
A clipper circuit is a fundamental wave-shaping device that harnesses the unique properties of diodes to alter and control waveform characteristics. This technology is widely used in electronic devices, especially in television and radar communication systems, where it enhances waveform modulation in both transmitters and receivers.
The operation of a clipper circuit can be exemplified by analyzing a dual-clipper configuration setup that integrates two ideal diodes, each paired with a biasing...
491

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Active-Learning-Guided Acoustic Metamaterial Resonators for Low-Frequency Noise Suppression and Piezoelectric Energy Harvesting.

Micromachines·2026
Same author

Precise detection of single particles and bio-sensing applications on quartz crystal microbalance using non-linear resonance behavior.

Microsystems & nanoengineering·2026
Same author

Microfluidics-guided localized low-temperature modulation of axonal signal propagation.

Lab on a chip·2026
Same author

Brain-inspired computing with fluidic iontronic nanochannels.

Proceedings of the National Academy of Sciences of the United States of America·2024
Same author

Surface-dominant micro/nanofluidics for efficient green energy conversion.

Biomicrofluidics·2024
Same author

Dispersive phase microscopy incorporated with droplet-based microfluidics for biofactory-on-a-chip.

Lab on a chip·2023

相关实验视频

Updated: Jul 21, 2025

Merging Ion Concentration Polarization between Juxtaposed Ion Exchange Membranes to Block the Propagation of the Polarization Zone
08:06

Merging Ion Concentration Polarization between Juxtaposed Ion Exchange Membranes to Block the Propagation of the Polarization Zone

Published on: February 23, 2017

8.5K

多层双极离子二极管在广泛的离子度范围内工作

Jaehyun Kim1, Cong Wang2, Jungyul Park1

  • 1Department of Mechanical Engineering, Sogang University, Sinsu-dong, Mapo-gu, Seoul 121-742, Republic of Korea.

Micromachines
|July 29, 2023
PubMed
概括
此摘要是机器生成的。

这项研究引入了一种具有不对称纳米通道网络膜的多层双极离子二极管,在广泛的盐度范围内实现稳定的离子电流纠正. 这种新的设计克服了以前的局限性,并显示出各种电子应用的潜力.

关键词:
二极性离子二极管是双极性的.歇斯底里循环中的歇斯底里循环.离子电流整顿的整顿方法多层多层的纳米通道网络膜膜.纳米颗粒是一种纳米粒子.

更多相关视频

Assessment of Boron Doped Diamond Electrode Quality and Application to In Situ Modification of Local pH by Water Electrolysis
13:09

Assessment of Boron Doped Diamond Electrode Quality and Application to In Situ Modification of Local pH by Water Electrolysis

Published on: January 6, 2016

14.8K
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.7K

相关实验视频

Last Updated: Jul 21, 2025

Merging Ion Concentration Polarization between Juxtaposed Ion Exchange Membranes to Block the Propagation of the Polarization Zone
08:06

Merging Ion Concentration Polarization between Juxtaposed Ion Exchange Membranes to Block the Propagation of the Polarization Zone

Published on: February 23, 2017

8.5K
Assessment of Boron Doped Diamond Electrode Quality and Application to In Situ Modification of Local pH by Water Electrolysis
13:09

Assessment of Boron Doped Diamond Electrode Quality and Application to In Situ Modification of Local pH by Water Electrolysis

Published on: January 6, 2016

14.8K
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.7K

科学领域:

  • 纳米技术 纳米技术
  • 材料科学 材料科学 材料科学
  • 物理化学 物理化学

背景情况:

  • 离子电流纠正 (ICR) 对二极管性能至关重要,但由于制造挑战和狭窄的操作度范围而受到限制.
  • 以前试图增强ICR的尝试面临着内在的几何约束和对盐度的敏感性.

研究的目的:

  • 开发使用非对称纳米通道网络膜 (NCNM) 的多层双极离子二极管,以提高和稳定的ICR性能.
  • 探索微通道几何学在ICR上的影响,使用软光刻.
  • 为了研究设备在广泛的盐度和频率的性能.

主要方法:

  • 使用软光刻和纳米粒子自组装制造非对称NCNM的制造.
  • 一个多层双极离子二极管的构造.
  • 在不同度和频率下对ICR的性能评估.
  • 多物理模拟以了解二极管连接处的离子行为.

主要成果:

  • 多层NCNM二极管在广泛的盐度范围 (0.1mM100mM) 上表现出强大而稳定的ICR性能.
  • 当阳离子选择性 (AS) 和阴离子选择性 (CS) NCNM体积被优化时,达到最大的ICR,类似于单层设备.
  • 多物理模拟证实了与单层设备相比,在前置偏差下增强的离子度和在后置偏差下减少的耗尽.
  • 在不同的频率和盐度下观察到一个大面积的歇斯底里循环.

结论:

  • 拟议的多层双极离子二极管为稳定的ICR提供了强大的解决方案,克服了以前设计的局限性.
  • 通过软光刻的自由调节几何学允许优化ICR性能.
  • 该设备由于其独特的电气特性,在电,记忆器和生物传感器中的应用具有显著的潜力.