相关实验视频

Updated: Jul 21, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

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压力和压力光学效应增强的核心外结构基于纳米线的场效应晶体管

Xiang Liu1,2, Fangpei Li1,2,3, Wenbo Peng1,2

  • 1School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.

Micromachines
|July 29, 2023
PubMed
概括

这项研究模拟Si/ZnO纳米线异质连接场效应晶体管 (HJFETs),以探索压缩和压缩光学效应. 结果显示,在应变下电流调节显著,Si/ZnO HJFET的性能优于ZnO/Si对应物.

关键词:
ZnO ZnO ZnO ZnO ZnO ZnO ZnO ZnO ZnO ZnO ZnO ZnO核心外结构 核心外结构异质连接场效应晶体管的异质连接.压缩-光子电子仪器压电式电子仪器 (Piezotronic) 是一种电子仪器.

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