相关实验视频

Updated: Jul 21, 2025

Author Spotlight: Simulation and Analysis of the Temperature Rise of Ring Main Unit Equipment
04:35

Author Spotlight: Simulation and Analysis of the Temperature Rise of Ring Main Unit Equipment

Published on: July 5, 2024

1.9K

层空隙损坏对IGBT模块温度的影响

Pengpeng Xu1, Peisheng Liu1, Lei Yan1

  • 1Jiangsu Key Laboratory of ASIC Design, Nantong University, Nantong 226019, China.

Micromachines
|July 29, 2023
PubMed
概括

功率半导体设备中的接空隙显著增加了工作温度. 优化空隙大小,位置和使用纳米银糊可以提高热稳定性和设备可靠性.

关键词:
安西斯有限元分析 (ANSYS)在IGBT模块中,模块是IGBT.最大的交叉点温度.可靠性的可靠性没有空虚的空虚.

更多相关视频

In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for CuIn,GaSe2 Solar Cells09:19

In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for CuIn,GaSe2 Solar Cells

Published on: October 3, 2018

8.4K
A 3D-printed Chamber for Organic Optoelectronic Device Degradation Testing08:29

A 3D-printed Chamber for Organic Optoelectronic Device Degradation Testing

Published on: August 10, 2018

8.0K

相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
282
Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
402
Bridge rectifier01:24

Bridge rectifier

The bridge rectifier is essential in electronics for efficiently converting alternating current (AC) to direct current (DC). Comprised of four diodes configured in a bridge layout, this rectifier effectively processes both the positive and negative halves of the AC waveform, making it superior to half-wave and full-wave center-tapped rectifiers in terms of voltage regulation and output stability.
Operationally, the bridge rectifier allows current flow through two of its diodes during each...
682
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
388
Diode: Forward bias01:20

Diode: Forward bias

In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
1.1K
Diode: Reverse bias01:14

Diode: Reverse bias

A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
817