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Updated: Jul 21, 2025

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门周围通道工程充电等离子纳米线基于FET的通用源放大器的实施

Sarabdeep Singh1, Leo Raj Solay2, Sunny Anand2

  • 1Model Institute of Engineering and Technology, Jammu 181122, India.

Micromachines
|July 29, 2023
PubMed
概括

这项研究介绍了一种具有增强性能的新型门工程门全方位充电等离子纳米线场效应晶体管 (GAA-DMG-GS-CP NW-FET). 该设备对未来的低功耗纳米级应用有很大的希望,因为它有了改进的模拟和射频特性.

关键词:
纳米线FET的使用方法充电等离子体充电等离子体常用源放大器的放大器是常用的.双材料频道是双材料频道.门的堆叠 门的堆叠一个单一材料门的门.

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