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相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Temperature Measurement Sites01:14

Temperature Measurement Sites

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A thermometer measures body temperature. The common sites for measuring body temperature are the oral cavity, axillary region, temporal artery, and skin surface, such as the forehead, abdomen, and axilla. True core body temperature is assessed in the rectum, tympanic membrane, pulmonary artery, esophagus, and urinary bladder.
Oral: When assessing oral temperature, the thermometer tip should be placed under the tongue in the posterior sublingual pocket. It offers accurate readings and can be...
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Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

603
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
603
Biasing of P-N Junction01:16

Biasing of P-N Junction

602
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
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Inverting and Non-inverting OpAmps01:20

Inverting and Non-inverting OpAmps

811
In an inverting amplifier, the input voltage is connected through a resistor to the inverting terminal. Meanwhile, the non-inverting terminal is grounded and a feedback resistor is established between the inverting and output terminal, as depicted in Figure 1.
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Design Example: Strain Gauge Bridge or Wheatstone Bridge01:15

Design Example: Strain Gauge Bridge or Wheatstone Bridge

445
The utilization of strain gauges as transducers for converting mechanical strain into electrical signals is a common practice in various engineering applications. These strain gauges are frequently integrated into Wheatstone bridge circuits to accurately measure parameters such as force or pressure. Within this context, each element within the circuit exhibits a resistance that undergoes subtle variations when subjected to mechanical strain. The primary objective is to convert minuscule...
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相关实验视频

Updated: Jul 21, 2025

Method for Simultaneous fMRI/EEG Data Collection during a Focused Attention Suggestion for Differential Thermal Sensation
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一个高精度的电流模式带隙参考与非线性温度补偿.

Zhizhi Chen1,2, Qian Wang1, Xi Li1

  • 1State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.

Micromachines
|July 29, 2023
PubMed
概括
此摘要是机器生成的。

本研究提出了一个高精度的电流模式带隙参考 (BGR) 电路,具有先进的温度补偿. 新型设计显著减少了电流变化,并实现了低温度系数,以提高精度.

关键词:
带间隙是当前的参考电流.当前模式的参考值.高度的曲率补偿技术.温度系数 (TC) 是一个温度系数.

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科学领域:

  • 电气工程 电气工程
  • 集成电路设计 集成电路设计
  • 半导体设备 半导体设备

背景情况:

  • 带隙参考 (BGR) 电路对于稳定的电压和电流参考至关重要.
  • 在BGR电路中实现高精度需要有效补偿温度依赖的变化.
  • 现有的BGR设计经常面临非线性电流行为和温度系数的挑战.

研究的目的:

  • 开发一个高精度的电流模式带隙参考 (BGR) 电路.
  • 实施高阶温度补偿技术,以提高准确度.
  • 为了克服BGR电路中非线性电流行为的局限性.

主要方法:

  • 修改了BGR电路的非线性电流方程.
  • 引入了使用非线性补偿双极连接晶体管 (NLCBJT) 的高阶温度补偿.
  • 实施了两个解决方案:分割NLCBJT分支并注入非线性电流以降低温度系数 (TC).

主要成果:

  • 减少了NLCBJTs的电流变化,从148.41 nA降至69.35 nA和7.4 nA.
  • 在 -50 °C至120 °C期间,达到约3.78 ppm/°C的低TC.
  • 证明静止电流消耗量为42.13μA,紧的布局尺寸为0.044mm2.

结论:

  • 拟议的高阶温度补偿显著提高了BGR电路的精度.
  • 修改后的非线性电流方程和补偿技术有效地减少了温度引起的错误.
  • 开发的BGR电路适用于需要在广泛温度范围内高精度和稳定性的应用.