模拟CMOS逆变器电路的总电离剂量效应技术
Tianzhi Gao1, Chenyu Yin1, Yaolin Chen1
1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China.
Micromachines
|July 29, 2023
概括
总电离剂量 (TID) 的作用降低了绝缘体 (FDSOI) 设备上的完全耗尽的. 这项研究分析了TID对22nm FDSOI CMOS逆变器的影响,发现0.052V的逻辑值在400krad (Si) 时漂移.
科学领域:
- 半导体物理 半导体物理
- 电子产品中的辐射效应.
- 集成电路可靠性 集成电路可靠性
背景情况:
- 总电离剂量 (TID) 在绝缘体上完全耗尽的 (FDSOI) 设备中显著改变了电气参数.
- 目前关于电路级辐射效应的研究主要集中在单一事件效应上,对TID影响的调查有限.
- 对于现代电子产品来说,FDSOI技术至关重要,需要对其辐射耐受性的彻底了解.
研究的目的:
- 为了分析TID效应对22nm FDSOI CMOS逆变器电路的影响.
- 在不同辐射剂量下研究NMOS和PMOS晶体管的降解机制.
- 量化TID对基于FDSOI的逆变器电路性能特征的影响.
主要方法:
- 构建和校准N型和P型FDSOI金属氧化物半导体 (NMOS/PMOS) 结构.
- 模拟不同辐射剂量的设备传输特征和被困电荷分布.
- 对由校准的FDSOI NMOS和PMOS晶体管组成的CMOS逆变器电路的TID效应的分析.
主要成果:
- 该研究描述了FDSOI NMOS和PMOS设备在各种辐射剂量下的传输特征和被困电荷分布.
- 模拟表明,辐射剂量为400krad(Si) 在FDSOI CMOS逆变器中诱导了约0.052V的逻辑值电压偏移.
- 这些发现凸显了FDSOI逆变器电路对TID的敏感性,影响了它们的运行稳定性.
结论:
- TID 效应显著降低了 22 nm FDSOI 晶体管和相关的 CMOS 逆变器电路的性能.
- 观察到的逻辑值偏移强调了FDSOI设备在辐射环境中的辐射强化设计策略的需要.
- 这项研究为了解和减轻使用FDSOI技术的集成电路中TID引起的故障提供了关键数据.
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