在Si-NCs/SiO2多层中双极电阻切换过程的半实证二维模型
Juan Ramirez-Rios1, Karla Esther González-Flores1, José Juan Avilés-Bravo1
1Electronics Department, Instituto Nacional de Astrofísica, Óptica y Electrónica, San Andrés Cholula 72840, Puebla, Mexico.
Nanomaterials (Basel, Switzerland)
|July 29, 2023
概括
这项研究使用随机模型模拟了纳米晶 (Si-NC) 记忆元中的电阻切换. 该模型解释了在实验中观察到的导电的形成和中间状态,从而推进了对memristor的理解.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 电气工程 电气工程
背景情况:
- 双极电阻切换记忆 (RRAM) 对于下一代电子设备至关重要.
- 在氧化物矩阵中嵌入的纳米晶体 (Si-NC) 为RRAM设备提供了独特的特性.
- 了解导电纤维 (CF) 的形成和断裂是memristor可靠性的关键.
研究的目的:
- 模拟Si-NC嵌入式双极电阻切换记忆中的SET和RESET过程.
- 研究氧气空缺在Si-NC/SiO2多层内形成导电丝中的作用.
- 为了验证,将模拟结果与实验电流电压数据进行比较.
主要方法:
- 基于二维氧空置配置的随机模型的开发.
- 在Si-NC/SiO2多层memristor设备中模拟电阻开关.
- 对具有1个和3个Si-NC/SiO2双层的设备进行分析.
主要成果:
- 随机模型成功模拟了SET和RESET过程.
- Si-NCs作为氧空位聚合物的核化场所,促进CF的形成.
- 在3-bilayer装置中的中间电阻状态是由CF路径沿着优先氧空隙生成解释的.
结论:
- 随机模型为理解memristor切换机制提供了一个强大的框架.
- 在RRAM中,Si-NC在促进导电丝的形成方面发挥着至关重要的作用.
- 这项研究阐明了中间电阻状态的起源,这对于memristor设计和控制至关重要.
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