对15周期Si0.7Ge0.3/Si多层结构在Gate-All-Around晶体管过程中的选择性干蚀效应的研究
Enxu Liu1,2, Junjie Li1,2, Na Zhou1,2
1Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing 100029, China.
Nanomaterials (Basel, Switzerland)
|July 29, 2023
概括
这项研究详细介绍了 - (Si0.7Ge0.3) 在门周围 (GAA) 结构中的干蚀刻. 它识别和验证了对于先进的半导体制造至关重要的蚀刻效应.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 纳米技术纳米技术
背景情况:
- 门全方位 (GAA) 结构对于下一代逻辑设备和3D-DRAM至关重要.
- 在GAA架构中,对Si0.7Ge0.3进行选择性蚀刻对于内部空间空洞形成和通道释放至关重要.
- 在Si0.7Ge0.3/Si多层中增加通道层可以提高设备性能和存储密度.
研究的目的:
- 为了研究一个15周期Si0.7Ge0.3/Si多层结构的干蚀特征.
- 要了解蚀刻参数对Si0.7Ge0.3选择性蚀刻在GAA结构中的影响.
- 为GAA制造提供有关选择性蚀刻的机制的见解.
主要方法:
- 利用模拟和实验方法的组合.
- 专注于感应合等离子体 (ICP) 干蚀刻技术.
- 在15周期Si0.7Ge0.3/Si多层结构上分析了蚀刻效应.
主要成果:
- 模拟预测了随机横向蚀刻深度和不对称的纳米板边缘损伤.
- 实验结果验证了预测的模拟结果.
- 研究了压力,功率和其他参数对蚀刻选择性和均性的影响.
结论:
- 该研究成功地描述了复杂的多层结构中Si0.7Ge0.3的干选择性蚀刻.
- 确定了与GAA设备制造相关的关键蚀刻效应和机制.
- 这些发现为优化先进半导体制造中的选择性蚀刻工艺提供了关键数据.
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