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载体陷及其对AlGaN/GaN纳米线包装门晶体管表面和核心的影响
Siva Pratap Reddy Mallem1, Peddathimula Puneetha2, Dong-Yeon Lee2
1Advanced Material Research Center, Kumoh National Institute of Technology, Gumi 39177, Republic of Korea.
Nanomaterials (Basel, Switzerland)
|July 29, 2023
概括
本研究使用C-V,G-V和噪声测量研究了AlGaN/GaN纳米线晶体管中的载体陷. 结果显示,表面陷密度随频率的下降而下降,并且观察到1/f噪声行为.
科学领域:
- 半导体物理 半导体物理
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
背景情况:
- AlGaN/GaN纳米线晶体管对于高频和高功率电子产品至关重要.
- 了解载体陷机制对于优化设备性能至关重要.
- 表面和核心陷显著影响纳米线设备的电气特性.
研究的目的:
- 研究AlGaN/GaN纳米线封装门晶体管 (WGT) 的表面/核心上的载体陷机制.
- 分析表面陷密度的依赖频率的行为.
- 在WGT中描述噪声特性和识别噪声源.
主要方法:
- 电容-电压 (C-V) 的测量.
- 导电电压 (G-V) 的测量.
- 频率依赖的噪声测量.
主要成果:
- 表面陷密度随着频率的增加而显著下降,从9.1×10^13 eV^-1∙cm^-2在1kHz下降到1.2×10^11 eV^-1∙cm^-2在1MHz下降.
- 在屏障积累区域观察到1/f噪声行为,随着门偏差的增加而增加.
- 该设备在较低频率呈现1/f噪声,并转换为1kHz以外的1/f^2噪声.
- 在深度下值模式下,1/f^2-噪声的切断频率转移到较低的频率 (~10^2 Hz).
结论:
- 在AlGaN/GaN WGT中,载体陷机制是频率依赖的.
- 噪声测量提供了陷动态和设备操作模式的洞察力.
- 这些发现对于可靠的AlGaN/GaN纳米线器件的设计和制造至关重要.
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